CSD15380F3 Series

20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection

Catalog

20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Mounting Type	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Texas Instruments CSD15380F3T	2.5 V	8 V	500 mW	1190 mOhm	3-XFDFN	-55 °C	150 °C	10 V	Surface Mount	3-PICOSTAR	MOSFET (Metal Oxide)	10.5 pF	1.35 V	500 mA	20 V	N-Channel	0.281 nC
Texas Instruments CSD15380F3	2.8 V	8 V	500 mW	1190 mOhm	3-XFDFN	-55 °C	150 °C	10 V	Surface Mount	3-PICOSTAR	MOSFET (Metal Oxide)	10.5 pF	1.35 V	500 mA	20 V	N-Channel	0.281 nC

Catalog

20-V, N channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection

Key Features

• Ultra-low CiSSand COSSUltra-low Qgand QgdUltra-small footprint0.73 mm × 0.64 mmUltra-low profile0.36-mm max heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantUltra-low CiSSand COSSUltra-low Qgand QgdUltra-small footprint0.73 mm × 0.64 mmUltra-low profile0.36-mm max heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant

Description

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.