Specification	FDMC5614P

Current - Continuous Drain (Id) @ 25°C	5.7 A, 13.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1055 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	42 W, 2.1 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	8-MLP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMC5614P Series

P-Channel PowerTrench® MOSFET -60V, -13.5A, 100mΩ

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Technology	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [x]	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDMC5614P	8-MLP (3.3x3.3)	-55 °C	150 °C	1055 pF	20 V	MOSFET (Metal Oxide)	P-Channel	Surface Mount	3 V	4.5 V 10 V	100 mOhm	20 nC	8-PowerWDFN	2.1 W 42 W	60 V	5.7 A 13.5 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMC5614P Series

This P-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V).