1N5811E3
ActiveRECTIFIER DIODE SWITCHING 2-PIN 150V, 6A, 30NS B-BODY
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1N5811E3
ActiveRECTIFIER DIODE SWITCHING 2-PIN 150V, 6A, 30NS B-BODY
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Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5811E3 |
|---|---|
| Capacitance @ Vr, F | 60 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | Axial, B |
| Reverse Recovery Time (trr) | 30 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | B, Axial |
| Technology | Standard |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 7.98 | |
| Microchip Direct | N/A | 1 | $ 7.98 | |
| 100 | $ 7.41 | |||
| 500 | $ 7.13 | |||
| 1000 | $ 6.73 | |||
| Newark | Each | 100 | $ 7.41 | |
| 500 | $ 7.13 | |||
Description
General part information
1N5811-E3-Rectifier Series
This "Ultrafast Recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal "Category 1" metallurgical bond. These devices are available in both leaded and surface mount MELF package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.
Documents
Technical documentation and resources