STB8N65M5
ActiveN-CHANNEL 650 V, 0.56 OHM TYP., 7 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE
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STB8N65M5
ActiveN-CHANNEL 650 V, 0.56 OHM TYP., 7 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB8N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) [Max] | 70 W |
| Rds On (Max) @ Id, Vgs | 600 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1084 | $ 3.53 | |
Description
General part information
STB8N65M5 Series
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Documents
Technical documentation and resources