STG200G65FD8AG
ActiveAUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP 650 V, 200 A, HIGH-EFFICIENCY M SERIES IGBT DIE IN D8 PACKING
STG200G65FD8AG
ActiveAUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP 650 V, 200 A, HIGH-EFFICIENCY M SERIES IGBT DIE IN D8 PACKING
Technical Specifications
Parameters and characteristics for this part
| Specification | STG200G65FD8AG |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 200 A |
| Current - Collector Pulsed (Icm) | 600 A |
| Gate Charge | 701 nC |
| Grade | Automotive |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | Die |
| Qualification | AEC-Q101 |
| Supplier Device Package | Die |
| Switching Energy | 6.23 mJ, 5.34 mJ |
| Td (on/off) @ 25°C | 442.7 ns, 66.2 ns |
| Test Condition | 400 V, 15 V, 4.7 Ohm, 200 A |
| Vce(on) (Max) @ Vge, Ic | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 155 | $ 4.37 | |
| N/A | 0 | $ 3.96 | ||
Description
General part information
STG200G65FD8AG Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources