Specification	R1LV0208BSA-5SI#B1

Access Time	55 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization [custom]	256 K
Memory Organization [custom]	8
Memory Size	2 Gbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case [custom]	32-TFSOP
Package / Case [x]	0.465 "
Package / Case [x]	11.8 mm
Supplier Device Package	32-TSOP I
Technology	SRAM
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.7 V
Write Cycle Time - Word, Page [custom]	55 ns
Write Cycle Time - Word, Page [custom]	55 ns

R1LV0208BSA Series

2Mb Advanced LPSRAM (256k word x 8bit)

Part	Memory Organization [custom]	Memory Organization [custom]	Memory Size	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case [x]	Package / Case [custom]	Package / Case [x]	Memory Interface	Access Time	Supplier Device Package	Technology	Memory Type	Mounting Type	Memory Format	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
Renesas Electronics Corporation R1LV0208BSA-5SI#B0	256 K	8	2 Gbit	2.7 V	3.6 V	85 °C	-40 °C	0.465 "	32-TFSOP	11.8 mm	Parallel	55 ns	32-TSOP I	SRAM	Volatile	Surface Mount	SRAM	55 ns	55 ns
Renesas Electronics Corporation R1LV0208BSA-5SI#B1	256 K	8	2 Gbit	2.7 V	3.6 V	85 °C	-40 °C	0.465 "	32-TFSOP	11.8 mm	Parallel	55 ns	32-TSOP I	SRAM	Volatile	Surface Mount	SRAM	55 ns	55 ns
Renesas Electronics Corporation R1LV0208BSA-5SI#S1	256 K	8	2 Gbit	2.7 V	3.6 V	85 °C	-40 °C	0.465 "	32-TFSOP	11.8 mm	Parallel	55 ns	32-TSOP I	SRAM	Volatile	Surface Mount	SRAM	55 ns	55 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 5.69
		10	$ 5.06
		25	$ 4.98
Newark	Each	1	$ 2.28
		10	$ 2.13
		25	$ 2.07
		50	$ 2.04
		100	$ 1.99
		468	$ 1.91
		702	$ 1.87

Description

General part information

R1LV0208BSA Series

The R1LV0208BSA is a family of low voltage 2-Mbit static RAMs organized as 262, 144-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0208BSA has realized higher density, higher performance and low power consumption. The R1LV0208BSA is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0208BSA has been packaged in 32-pin sTSOP.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

R1LV0208BSA Datasheet

Datasheet