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R1LV0208BSA-5SI#S0
Integrated Circuits (ICs)

R1LV0208BSA-5SI#S0

Obsolete
Renesas Electronics Corporation

2MB ADVANCED LPSRAM (256K WORD X 8BIT)

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R1LV0208BSA-5SI#S0
Integrated Circuits (ICs)

R1LV0208BSA-5SI#S0

Obsolete
Renesas Electronics Corporation

2MB ADVANCED LPSRAM (256K WORD X 8BIT)

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationR1LV0208BSA-5SI#S0
Access Time55 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization256K x 8
Memory Size2 Gbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 C
Operating Temperature [Min]-40 ¯C
Package / Case32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package32-TSOP I
TechnologySRAM
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V
Write Cycle Time - Word, Page55 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 6.14

Description

General part information

R1LV0208BSA Series

The R1LV0208BSA is a family of low voltage 2-Mbit static RAMs organized as 262, 144-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0208BSA has realized higher density, higher performance and low power consumption. The R1LV0208BSA is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0208BSA has been packaged in 32-pin sTSOP.

Documents

Technical documentation and resources