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TO-18
Discrete Semiconductor Products

JAN2N2432A

Active
Microchip Technology

NPN SILICON LOW-POWER 30V TO 45V, 0.1A

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TO-18
Discrete Semiconductor Products

JAN2N2432A

Active
Microchip Technology

NPN SILICON LOW-POWER 30V TO 45V, 0.1A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N2432A
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80 hFE
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-65 °C
Package / CaseTO-18-3 Metal Can, TO-206AA
Power - Max [Max]360 mW
QualificationMIL-PRF-19500/313
Supplier Device PackageTO-18
Supplier Device PackageTO-206AA
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic150 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Microchip DirectN/A 1$ 410.72

Description

General part information

JAN2N2432A-Transistor Series

This specification covers the performance requirements for low power, high speed chopper, NPN silicon 2N2432 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/313. Two levels of product assurance (JANHC and JANKC) are provided for unencapsulated die.

Documents

Technical documentation and resources