Discrete Semiconductor Products

PSMN7R8-120ESQ

Obsolete

MOSFET N-CH 120V 70A I2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 120V 70A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN7R8-120ESQ

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	167 nC
Input Capacitance (Ciss) (Max) @ Vds	9473 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	349 W
Rds On (Max) @ Id, Vgs	7.9 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PSMN7R8-120PSQ	349 W	I2PAK	20 V	7.9 mOhm	167 nC	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	9473 pF	Through Hole	70 A	-55 °C	175 ░C	N-Channel	120 V	10 V
Freescale Semiconductor - NXP PSMN7R8-120ESQ	349 W	I2PAK	20 V	7.9 mOhm	167 nC	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	9473 pF	Through Hole	70 A	-55 °C	175 ░C	N-Channel	120 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 120 V 70A (Tc) 349W (Tc) Through Hole I2PAK

Technical documentation and resources