Discrete Semiconductor Products

PSMN7R8-120PSQ

Obsolete

TRANS MOSFET N-CH 120V 70A 3-PIN(3+TAB) TO-220AB RAIL

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Discrete Semiconductor Products

Obsolete

TRANS MOSFET N-CH 120V 70A 3-PIN(3+TAB) TO-220AB RAIL

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN7R8-120PSQ

Current - Continuous Drain (Id) (Tc)	70 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	167 nC, 167 nC
Input Capacitance (Ciss) (Max)	9473 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	I2PAK
Power Dissipation (Max)	349 W
Rds On (Max)	7.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package Name	FET Type	Package / Case	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Vgs(th) (Max)	Power Dissipation (Max)	Mounting Type	Gate Charge (Max)
Nexperia USA Inc. PSMN7R8-120PSQ	7.9 mOhm	10 V	20 V	I2PAK	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	70 A	9473 pF	120 V	-55 °C	175 °C	MOSFET (Metal Oxide)	4 V	349 W	Through Hole	167 nC 167 nC
Nexperia USA Inc. PSMN7R8-120ESQ	7.9 mOhm	10 V	20 V	I2PAK	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	70 A	9473 pF	120 V	-55 °C	175 °C	MOSFET (Metal Oxide)	4 V	349 W	Through Hole	167 nC 167 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.82	1m+

3D models and CAD resources for this part

General part information

N-Channel 120 V 70A (Tc) 349W (Tc) Through Hole I2PAK

Technical documentation and resources