Discrete Semiconductor Products

IRFBC40

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 600V 6.2A TO220AB

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DocumentsDatasheet IRLZ44

Discrete Semiconductor Products

IRFBC40

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 600V 6.2A TO220AB

Deep-Dive with AI

DocumentsDatasheet IRLZ44

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFBC40

Current - Continuous Drain (Id) @ 25°C	6.2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFBC40 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division IRFBC40STRL	10 V	Surface Mount	60 nC	1300 pF	6.2 A	MOSFET (Metal Oxide)	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	4 V	3.1 W 130 W	N-Channel	20 V	TO-263 (D2PAK)	1.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC40ASPBF	10 V	Surface Mount		1036 pF	6.2 A	MOSFET (Metal Oxide)	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	4 V	125 W	N-Channel	30 V	TO-263 (D2PAK)	1.2 Ohm	42 nC
Vishay General Semiconductor - Diodes Division IRFBC40LCS	10 V	Surface Mount	39 nC	1100 pF	6.2 A	MOSFET (Metal Oxide)	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	4 V	125 W	N-Channel	30 V	TO-263 (D2PAK)	1.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC40STRLPBF	10 V	Surface Mount	60 nC	1300 pF	6.2 A	MOSFET (Metal Oxide)	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	4 V	3.1 W 130 W	N-Channel	20 V	TO-263 (D2PAK)	1.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC40ASTRLPBF	10 V	Surface Mount		1036 pF	6.2 A	MOSFET (Metal Oxide)	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	4 V	125 W	N-Channel	30 V	TO-263 (D2PAK)	1.2 Ohm	42 nC
Vishay General Semiconductor - Diodes Division IRFBC40L	10 V	Through Hole	60 nC	1300 pF	6.2 A	MOSFET (Metal Oxide)	-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	600 V	4 V	3.1 W 130 W	N-Channel	20 V	I2PAK	1.2 Ohm
Vishay General Semiconductor - Diodes Division IRFBC40	10 V	Through Hole	60 nC	1300 pF	6.2 A	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3	600 V	4 V	125 W	N-Channel	20 V	TO-220AB	1.2 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IRFBC40 Series

N-Channel 600 V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources

Datasheet

IRLZ44

Datasheet