IRFBC40 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 6.2A D2PAK
| Part | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | FET Type | Vgs (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 10 V | Surface Mount | 60 nC | 1300 pF | 6.2 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 600 V | 4 V | 3.1 W 130 W | N-Channel | 20 V | TO-263 (D2PAK) | 1.2 Ohm | |
Vishay General Semiconductor - Diodes Division | 10 V | Surface Mount | 1036 pF | 6.2 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 600 V | 4 V | 125 W | N-Channel | 30 V | TO-263 (D2PAK) | 1.2 Ohm | 42 nC | |
Vishay General Semiconductor - Diodes Division | 10 V | Surface Mount | 39 nC | 1100 pF | 6.2 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 600 V | 4 V | 125 W | N-Channel | 30 V | TO-263 (D2PAK) | 1.2 Ohm | |
Vishay General Semiconductor - Diodes Division | 10 V | Surface Mount | 60 nC | 1300 pF | 6.2 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 600 V | 4 V | 3.1 W 130 W | N-Channel | 20 V | TO-263 (D2PAK) | 1.2 Ohm | |
Vishay General Semiconductor - Diodes Division | 10 V | Surface Mount | 1036 pF | 6.2 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 600 V | 4 V | 125 W | N-Channel | 30 V | TO-263 (D2PAK) | 1.2 Ohm | 42 nC | |
Vishay General Semiconductor - Diodes Division | 10 V | Through Hole | 60 nC | 1300 pF | 6.2 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | I2PAK TO-262-3 Long Leads TO-262AA | 600 V | 4 V | 3.1 W 130 W | N-Channel | 20 V | I2PAK | 1.2 Ohm | |
Vishay General Semiconductor - Diodes Division | 10 V | Through Hole | 60 nC | 1300 pF | 6.2 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | TO-220-3 | 600 V | 4 V | 125 W | N-Channel | 20 V | TO-220AB | 1.2 Ohm |