Discrete Semiconductor Products

STF12NM50N

Obsolete

STMicroelectronics

MOSFET N-CH 500V 11A TO220FP

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Discrete Semiconductor Products

STF12NM50N

Obsolete

STMicroelectronics

MOSFET N-CH 500V 11A TO220FP

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF12NM50N

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	940 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STF12 Series

N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP package

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STF12NM65	11 A	TO-220-3 Full Pack	TO-220FP	Through Hole
STMicroelectronics STF120NF10	41 A	TO-220-3 Full Pack	TO-220FP	Through Hole	100 V	20 V	5200 pF	10.5 mOhm	233 nC	10 V	175 °C	-55 °C	45 W	MOSFET (Metal Oxide)	4 V	N-Channel
STMicroelectronics STF12NM60N	10 A	TO-220-3 Full Pack	TO-220FP	Through Hole	600 V	25 V	960 pF	410 mOhm		10 V	150 °C	-55 °C	25 W	MOSFET (Metal Oxide)	4 V	N-Channel	30.5 nC
STMicroelectronics STF12N65M2	8 A	TO-220-3 Full Pack	TO-220FP	Through Hole	650 V	25 V		500 mOhm	16.5 nC	10 V	150 °C	-55 °C	25 W	MOSFET (Metal Oxide)	4 V	N-Channel
STMicroelectronics STF12NM50N	11 A	TO-220-3 Full Pack	TO-220FP	Through Hole	500 V	25 V		380 mOhm		10 V			25 W	MOSFET (Metal Oxide)	4 V	N-Channel	30 nC	150 °C	940 pF
STMicroelectronics STF12N65M5	8.5 A	TO-220-5 Full Pack	TO-220FP	Through Hole	650 V	25 V		430 mOhm	22 nC	10 V			25 W	MOSFET (Metal Oxide)	5 V	N-Channel		150 °C	900 pF
STMicroelectronics STF12N50M2	10 A	TO-220-3 Full Pack	TO-220FP	Through Hole	500 V	25 V		380 mOhm		10 V	150 °C	-55 °C	85 W	MOSFET (Metal Oxide)	4 V	N-Channel	15 nC		560 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.49

Description

General part information

STF12 Series

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources