Specification	MJD210G

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	45 hFE
Frequency - Transition	65 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.4 W
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max)	25 V

MJD210 Series

5.0 A, 25 V PNP Bipolar Power Transistor

Part	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Transistor Type	Current - Collector (Ic) (Max)	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition
ON Semiconductor MJD210G	DPAK	150 °C	-65 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	PNP	5 A	1.4 W	45 hFE	100 nA	25 V	Surface Mount	1.8 V	65 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.00
		10	$ 0.62
		100	$ 0.41
		500	$ 0.31
		1000	$ 0.28
		2000	$ 0.26
		5000	$ 0.23
		10000	$ 0.21
		50000	$ 0.20
ON Semiconductor	N/A	1	$ 0.21

Description

General part information

MJD210 Series

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.