MJD210 Series

5.0 A, 25 V PNP Bipolar Power Transistor

Catalog

5.0 A, 25 V PNP Bipolar Power Transistor

Part	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Transistor Type	Current - Collector (Ic) (Max)	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition
ON Semiconductor MJD210G	DPAK	150 °C	-65 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	PNP	5 A	1.4 W	45 hFE	100 nA	25 V	Surface Mount	1.8 V	65 MHz

Catalog

5.0 A, 25 V PNP Bipolar Power Transistor

Key Features

• Collector-Emitter Sustaining Voltage - VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

• High DC Current Gain - hFE= 70 (Min) @ IC= 500 mAdc= 45 (Min) @ IC= 2 Adc= 10 (Min) @ IC= 5 Adc

• Low Collector-Emitter Saturation Voltage - VCE(sat)= 0.30 Vdc (Max) @ IC= 500 mAdc= 0.75 Vdc (Max) @ IC= 2.0 Adc

• High Current-Gain - Bandwidth Product - fT= 65 MHz (Min) @ IC= 100 mAdc

• Annular Construction for Low Leakage - ICBO= 100 nAdc @ Rated VCB

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb-Free and are RoHS Compliant

• MJD200 is the complementary NPN device

Description

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.