Specification	FCPF250N65S3L1-F154

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1010 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

FCPF250N65S3R0L-F154 Series

Power MOSFET, N-Channel, SUPERFET<sup>®</sup> III, Easy Drive, 650 V, 12 A, 250 mΩ, TO-220F Ultra narrow lead

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FCPF250N65S3R0L-F154	24 nC	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole	12 A	N-Channel	-55 °C	150 °C	30 V	31 W	TO-220F-3	250 mOhm	4.5 V	650 V	1010 pF	10 V
ON Semiconductor FCPF250N65S3L1	24 nC	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole	12 A	N-Channel	-55 °C	150 °C	30 V	31 W	TO-220F-3	250 mOhm	4.5 V	650 V	1010 pF	10 V
ON Semiconductor FCPF250N65S3L1-F154	24 nC	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole	12 A	N-Channel	-55 °C	150 °C	30 V	31 W	TO-220F-3	250 mOhm	4.5 V	650 V	1010 pF	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.34
		10	$ 2.86
		100	$ 2.02
		500	$ 1.67
		1000	$ 1.56
Newark	Each	1	$ 5.02
		10	$ 3.92
		25	$ 2.81
		50	$ 2.71
		100	$ 2.61
ON Semiconductor	N/A	1	$ 1.44

Description

General part information

FCPF250N65S3R0L-F154 Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.