FCPF250N65S3R0L-F154 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 250 mΩ, TO-220F Ultra narrow lead

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 250 mΩ, TO-220F Ultra narrow lead

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FCPF250N65S3R0L-F154	24 nC	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole	12 A	N-Channel	-55 °C	150 °C	30 V	31 W	TO-220F-3	250 mOhm	4.5 V	650 V	1010 pF	10 V
ON Semiconductor FCPF250N65S3L1	24 nC	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole	12 A	N-Channel	-55 °C	150 °C	30 V	31 W	TO-220F-3	250 mOhm	4.5 V	650 V	1010 pF	10 V
ON Semiconductor FCPF250N65S3L1-F154	24 nC	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole	12 A	N-Channel	-55 °C	150 °C	30 V	31 W	TO-220F-3	250 mOhm	4.5 V	650 V	1010 pF	10 V

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 250 mΩ, TO-220F Ultra narrow lead

Key Features

• Optimized Capacitance

• 700 V @ TJ= 150 °C

• Low Effective Output Capacitance (Typ. Coss(eff.)= 248 pF)

• Ultra Low Gate Charge (Typ. Qg= 24 nC)

• Typ. RDS(on)= 210 mΩ

• 100% Avalanche Tested

• Internal Gate resistance: 1.1 Ω

• RoHS Compliant

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.