Discrete Semiconductor Products
MBR1100RL
ObsoleteON Semiconductor
1.0 A, 100 V, SCHOTTKY BARRIER RECTIFIER
Discrete Semiconductor Products
MBR1100RL
ObsoleteON Semiconductor
1.0 A, 100 V, SCHOTTKY BARRIER RECTIFIER
Technical Specifications
Parameters and characteristics for this part
| Specification | MBR1100RL |
|---|---|
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 500 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-204AL, DO-41, Axial |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | Axial |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 790 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MBR1100 Series
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
Documents
Technical documentation and resources