MBR1100 Series

1.0 A, 100 V, Schottky Barrier Rectifier

Catalog

1.0 A, 100 V, Schottky Barrier Rectifier

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
ON Semiconductor MBR1100RLG	175 ░C	-65 C	Schottky	Through Hole	500 µA	100 V	Axial DO-204AL DO-41	200 mA 500 ns	1 A	790 mV	Axial
ON Semiconductor MBR1100G	175 ░C	-65 C	Schottky	Through Hole	500 µA	100 V	Axial DO-204AL DO-41	200 mA 500 ns	1 A	790 mV	Axial
ON Semiconductor MBR1100RL	175 ░C	-65 C	Schottky	Through Hole	500 µA	100 V	Axial DO-204AL DO-41	200 mA 500 ns	1 A	790 mV	Axial

Catalog

1.0 A, 100 V, Schottky Barrier Rectifier

Key Features

• Low Reverse Current

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

• Guard-Ring for Stress Protection

• Low Forward Voltage

• 150°C Operating Junction Temperature

• High Surge CapacityMechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead Temperature for Soldering Purposes: 260°C Max.for 10 Seconds

• Shipped in plastic bags, 1000 per bag

• Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number

• Polarity: Cathode Indicated by Polarity Band

• Marking: B1100

• These are Pb-Free Devices

Description

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.