Discrete Semiconductor Products

PH2925U,115

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MOSFET N-CH 25V 100A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 25V 100A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PH2925U,115

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max] [x]	92 nC
Gate Charge (Qg) (Max) @ Vgs [x]	4.5 V
Input Capacitance (Ciss) (Max) @ Vds	6150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	62.5 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	950 mV

Part	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [x]	Gate Charge (Qg) (Max) @ Vgs [Max] [x]	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology
Freescale Semiconductor - NXP PH2925U,115	N-Channel	10 V	950 mV	4.5 V	92 nC	25 V	SC-100 SOT-669	LFPAK56 Power-SO8	100 A	4.5 V	3 mOhm	-55 °C	150 °C	Surface Mount	62.5 W	6150 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 25 V 100A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources