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SOT669
Discrete Semiconductor Products

PH2925U,115

Active
Nexperia USA Inc.

N-CHANNEL TRENCHMOS ULTRA LOW LEVEL FET

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SOT669
Discrete Semiconductor Products

PH2925U,115

Active
Nexperia USA Inc.

N-CHANNEL TRENCHMOS ULTRA LOW LEVEL FET

Technical Specifications

Parameters and characteristics for this part

SpecificationPH2925U,115
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs92 nC
Input Capacitance (Ciss) (Max) @ Vds6150 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-100, SOT-669
Power Dissipation (Max) [Max]62.5 W
Rds On (Max) @ Id, Vgs3 mOhm
Supplier Device PackagePower-SO8, LFPAK56
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.22
10$ 1.00
100$ 0.78
500$ 0.66
Digi-Reel® 1$ 1.22
10$ 1.00
100$ 0.78
500$ 0.66
N/A 1567$ 2.31
Tape & Reel (TR) 1500$ 0.54
3000$ 0.51
7500$ 0.48
10500$ 0.47

Description

General part information

PH2925U Series

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.