N-channel TrenchMOS ultra low level FET
N-channel TrenchMOS ultra low level FET
| Part | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 62.5 W | 92 nC | 150 °C | -55 °C | MOSFET (Metal Oxide) | 25 V | N-Channel | 10 V | 3 mOhm | 950 mV | 6150 pF | LFPAK56 Power-SO8 | 100 A | Surface Mount | SC-100 SOT-669 | 4.5 V |