Integrated Circuits (ICs)

LMG1210RVRR

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1.5-A, 3-A, 200-V HALF BRIDGE GATE DRIVER, 5-V UVLO AND PROGRAMMABLE DEAD-TIME FOR GANFET AND MOSFET

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DocumentsHow GaN Enables More Efficient and Reduced Form Factor Power Supplies Key Parameters and Driving Requirements of GaN FETs +13

Integrated Circuits (ICs)

LMG1210RVRR

Active

Texas Instruments

1.5-A, 3-A, 200-V HALF BRIDGE GATE DRIVER, 5-V UVLO AND PROGRAMMABLE DEAD-TIME FOR GANFET AND MOSFET

Deep-Dive with AI

DocumentsHow GaN Enables More Efficient and Reduced Form Factor Power Supplies Key Parameters and Driving Requirements of GaN FETs +13

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LMG1210RVRR

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	1.5 A
Current - Peak Output (Source, Sink) [custom]	3 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	200 V
Input Type	Non-Inverting
Mounting Type	Wettable Flank, Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	19-WFQFN Exposed Pad
Rise / Fall Time (Typ) [custom]	500 ps
Rise / Fall Time (Typ) [custom]	500 ps
Supplier Device Package	19-WQFN (3x4)
Voltage - Supply [Max]	18 V, 5.25 V
Voltage - Supply [Min]	4.75 V, 6 V

LMG1210 Series

1.5-A, 3-A, 200-V half bridge gate driver, 5-V UVLO and programmable dead-time for GaNFET and MOSFET

Part	Contents	Utilized IC / Part	Supplied Contents	Type	Function	Operating Temperature [Min]	Operating Temperature [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Package / Case	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Gate Type	Input Type	Channel Type
Texas Instruments LMG1210EVM-012	Board(s)	LMG1210	Board(s)	Power Management	Gate Driver
Texas Instruments LMG1210RVRR						-40 °C	125 ¯C	1.5 A	3 A	2	19-WFQFN Exposed Pad	200 V	Half-Bridge	19-WQFN (3x4)	500 ps	500 ps	4.75 V 6 V	5.25 V 18 V	Surface Mount Wettable Flank	N-Channel MOSFET	Non-Inverting	Independent

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.61
		10	$ 4.48
		25	$ 3.93
		100	$ 3.31
		250	$ 3.01
		500	$ 2.83
		1000	$ 2.67
	Digi-Reel®	1	$ 6.61
		10	$ 4.48
		25	$ 3.93
		100	$ 3.31
		250	$ 3.01
		500	$ 2.83
		1000	$ 2.67
	Tape & Reel (TR)	3000	$ 2.03
Texas Instruments	LARGE T&R	1	$ 3.23
		100	$ 2.83
		250	$ 1.99
		1000	$ 1.60

Description

General part information

LMG1210 Series

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.