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STGW40V60DF
Discrete Semiconductor Products

STGW40V60DF

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 40 A VERY HIGH SPEED

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STGW40V60DF
Discrete Semiconductor Products

STGW40V60DF

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 40 A VERY HIGH SPEED

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGW40V60DF
Current - Collector (Ic) (Max) [Max]80 A
Gate Charge226 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]283 W
Reverse Recovery Time (trr)41 ns
Supplier Device PackageTO-247-3
Switching Energy456 µJ, 411 µJ
Td (on/off) @ 25°C208 ns, 52 ns
Test Condition400 V, 10 Ohm, 15 V, 40 A
Vce(on) (Max) @ Vge, Ic [Max]2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 536$ 4.15
NewarkEach 1$ 5.27
10$ 4.31
25$ 3.34
50$ 3.13
100$ 2.91
250$ 2.56

Description

General part information

STGW40V60DF Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.