Discrete Semiconductor Products

SIS590DN-T1-GE3

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MOSFET N/P-CH 100V 2.7A PPAK1212

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Discrete Semiconductor Products

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MOSFET N/P-CH 100V 2.7A PPAK1212

Technical Specifications

Parameters and characteristics for this part

Specification	SIS590DN-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2.7 A, 2.3 A, 4 A
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	325 pF, 265 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Power - Max	23.1 W, 17.9 W, 2.6 W, 2.5 W
Rds On (Max) @ Id, Vgs	167 mOhm, 251 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Configuration	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power - Max	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIS590DN-T1-GE3	N and P-Channel	PowerPAK® 1212-8 Dual	MOSFET (Metal Oxide)	100 V	-55 °C	150 °C	2.5 V	2.5 W 2.6 W 17.9 W 23.1 W	Surface Mount	167 mOhm 251 mOhm	PowerPAK® 1212-8 Dual	265 pF 325 pF	2.3 A 2.7 A 4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 100V 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources