Discrete Semiconductor Products
STD170N4F7AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 40 V, 2.2 MOHM TYP., 80 A STRIPFET F7 POWER MOSFET IN A DPAK PACKAGE
Discrete Semiconductor Products
STD170N4F7AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 40 V, 2.2 MOHM TYP., 80 A STRIPFET F7 POWER MOSFET IN A DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD170N4F7AG |
|---|---|
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 172 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 2.8 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.83 | |
Description
General part information
STD170N4F7AG Series
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources