Specification	NTHC5513T1G

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C [Max]	2.9 A
Current - Continuous Drain (Id) @ 25°C [Min]	2.2 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

NTHC5513 Series

Complementary ChipFET™ Power MOSFET 20V

Part	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
ON Semiconductor NTHC5513T1G	1.1 W	-55 °C	150 °C	N and P-Channel	20 V	MOSFET (Metal Oxide)	4 nC	Logic Level Gate	Surface Mount	1.2 V	2.2 A	2.9 A	80 mOhm	180 pF	ChipFET™

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTHC5513 Series

This complementary (N and P Channel) device was designed with a small footprint package and ON Semiconductor's leading low RDS(on) technology for increased circuit efficiency. The performance is ideally suited for portable or handheld applications.