NTHC5513 Series

Complementary ChipFET™ Power MOSFET 20V

Catalog

Complementary ChipFET™ Power MOSFET 20V

Part	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
ON Semiconductor NTHC5513T1G	1.1 W	-55 °C	150 °C	N and P-Channel	20 V	MOSFET (Metal Oxide)	4 nC	Logic Level Gate	Surface Mount	1.2 V	2.2 A	2.9 A	80 mOhm	180 pF	ChipFET™

Catalog

Complementary ChipFET™ Power MOSFET 20V

Key Features

• Complentary N-Channel and P-Channel MOSFET

• Small Size, 40% Smaller than TSOP-6 Package

• Leadless SMD Package Featuring Complementary Pair

• ChipFET™ Package Provides Great Thermal Characteristics Similar to Larger Packages

• Low RDS(on)in a ChipFET™ Package for High Efficiency Performance

• Low Profile (< 1.1 mm) Allows Placement in Extremely Thin Environments such as Portable Electronics

• RoHS Compliant

Description

This complementary (N and P Channel) device was designed with a small footprint package and ON Semiconductor's leading low RDS(on) technology for increased circuit efficiency. The performance is ideally suited for portable or handheld applications.