NTB095N65S3HF
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 36 A, 95 MΩ, D2PAK
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NTB095N65S3HF
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, FRFET<SUP>®</SUP>, 650 V, 36 A, 95 MΩ, D2PAK
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Technical Specifications
Parameters and characteristics for this part
| Specification | NTB095N65S3HF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 36 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2930 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 272 W |
| Rds On (Max) @ Id, Vgs | 95 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 7.57 | |
| 10 | $ 5.14 | |||
| 100 | $ 3.76 | |||
| Digi-Reel® | 1 | $ 7.57 | ||
| 10 | $ 5.14 | |||
| 100 | $ 3.76 | |||
| Tape & Reel (TR) | 800 | $ 3.29 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 8.66 | |
| 1 | $ 8.66 | |||
| 10 | $ 6.70 | |||
| 10 | $ 6.70 | |||
| 25 | $ 6.69 | |||
| 25 | $ 6.69 | |||
| 50 | $ 6.12 | |||
| 50 | $ 6.12 | |||
| 100 | $ 5.66 | |||
| 100 | $ 5.66 | |||
| 250 | $ 5.54 | |||
| 250 | $ 5.54 | |||
| 500 | $ 5.46 | |||
| 500 | $ 5.46 | |||
| 1600 | $ 5.37 | |||
| 1600 | $ 5.37 | |||
| ON Semiconductor | N/A | 1 | $ 3.02 | |
Description
General part information
NTB095N65S3HF Series
SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.
Documents
Technical documentation and resources