NTB095N65S3HF Series

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 36 A, 95 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 36 A, 95 mΩ, D2PAK

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NTB095N65S3HF	36 A	66 nC	2930 pF	30 V	95 mOhm	TO-263 (D2PAK)	N-Channel	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	5 V	Surface Mount	650 V	272 W	-55 °C	150 °C

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 36 A, 95 mΩ, D2PAK

Key Features

• 700 V @ TJ = 150oC

• Ultra Low Gate Charge (Typ. Qg= 66 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF)

• Excellent body diode performance (low Qrr, robust body diode)

• Optimized Capacitance

• RoHS Compliant

• 100% Avalanche Tested

• Typ. RDS(on)= 80 mΩ

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.