Discrete Semiconductor Products

NGTB60N60SWG

Obsolete

ON Semiconductor

IGBT 600V 120A 298W TO247

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DocumentsPackage Drawing-340L-02-TO-247 Datasheet +1

Discrete Semiconductor Products

NGTB60N60SWG

Obsolete

ON Semiconductor

IGBT 600V 120A 298W TO247

Deep-Dive with AI

DocumentsPackage Drawing-340L-02-TO-247 Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NGTB60N60SWG

Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	240 A
Gate Charge	173 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	298 W
Reverse Recovery Time (trr)	76 ns
Supplier Device Package	TO-247-3
Switching Energy	600 µJ, 1.41 mJ
Td (on/off) @ 25°C	87 ns, 180 ns
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

NGTB60N60S Series

IGBT

Part	Current - Collector (Ic) (Max)	Mounting Type	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Package / Case	Gate Charge	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Switching Energy	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor NGTB60N60SWG	120 A	Through Hole	Trench Field Stop	600 V	76 ns	240 A	TO-247-3	173 nC	2.5 V	298 W	1.41 mJ 600 µJ	87 ns 180 ns	-55 °C	150 °C	TO-247-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NGTB60N60S Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co−packaged free wheeling diode with a lowforward voltage.