NGTB60N60S Series

IGBT

Catalog

IGBT

Part	Current - Collector (Ic) (Max)	Mounting Type	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Package / Case	Gate Charge	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Switching Energy	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
ON Semiconductor NGTB60N60SWG	120 A	Through Hole	Trench Field Stop	600 V	76 ns	240 A	TO-247-3	173 nC	2.5 V	298 W	1.41 mJ 600 µJ	87 ns 180 ns	-55 °C	150 °C	TO-247-3

Catalog

IGBT

Key Features

• Low Saturation Voltage using Trench with Fieldstop Technology

• Low Switching Loss Reduces System Power Dissipation

• Low Gate Charge

• Soft, Fast Free Wheeling Diode

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co−packaged free wheeling diode with a lowforward voltage.