LMG3526R030RQSR
Active650-V 30-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND ZERO-VOLTAGE DETECTION
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LMG3526R030RQSR
Active650-V 30-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND ZERO-VOLTAGE DETECTION
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Technical Specifications
Parameters and characteristics for this part
| Specification | LMG3526R030RQSR |
|---|---|
| Configuration | Half Bridge Inverter |
| Current | 55 A |
| Mounting Type | Wettable Flank, Surface Mount |
| Package / Case | 52-VQFN Exposed Pad |
| Type | MOSFET |
| Voltage | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 27.68 | |
| 10 | $ 25.53 | |||
| 25 | $ 24.38 | |||
| 100 | $ 21.80 | |||
| 250 | $ 20.80 | |||
| 500 | $ 19.79 | |||
| Digi-Reel® | 1 | $ 27.68 | ||
| 10 | $ 25.53 | |||
| 25 | $ 24.38 | |||
| 100 | $ 21.80 | |||
| 250 | $ 20.80 | |||
| 500 | $ 19.79 | |||
| Tape & Reel (TR) | 2000 | $ 18.34 | ||
| Texas Instruments | SMALL T&R | 1 | $ 16.27 | |
| 100 | $ 14.21 | |||
| 250 | $ 10.96 | |||
| 1000 | $ 9.80 | |||
Description
General part information
LMG3526R030 Series
The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3527R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
Documents
Technical documentation and resources