LMG3526R030 Series

650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection

Catalog

650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection

Part	Package / Case	Current	Mounting Type	Configuration	Voltage	Type
Texas Instruments LMG3526R030RQSR	52-VQFN Exposed Pad	55 A	Surface Mount Wettable Flank	Half Bridge Inverter	650 V	MOSFET

Catalog

650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection

Key Features

• 650V GaN-on-Si FET with integrated gate driverIntegrated high precision gate bias voltage200V/ns FET hold-off2MHz switching frequency20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigationOperates from 7.5V to 18V supplyRobust protectionCycle-by-cycle overcurrent and latched short-circuit protection with < 100ns responseWithstands 720V surge while hard-switchingSelf-protection from internal overtemperature and UVLO monitoringAdvanced power managementDigital temperature PWM outputLMG3526R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching convertersLMG3527R030 includes zero-current detection (ZCD) feature that facilitates soft-switching convertersTop-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance650V GaN-on-Si FET with integrated gate driverIntegrated high precision gate bias voltage200V/ns FET hold-off2MHz switching frequency20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigationOperates from 7.5V to 18V supplyRobust protectionCycle-by-cycle overcurrent and latched short-circuit protection with < 100ns responseWithstands 720V surge while hard-switchingSelf-protection from internal overtemperature and UVLO monitoringAdvanced power managementDigital temperature PWM outputLMG3526R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching convertersLMG3527R030 includes zero-current detection (ZCD) feature that facilitates soft-switching convertersTop-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance

Description

The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3527R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected . Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. The LMG352xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG352xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3526R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3527R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected . Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.