Specification	PMV28ENER

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	266 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	660 mW
Power Dissipation (Max)	8.3 W
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

PMV28ENE Series

30 V, N-channel Trench MOSFET

Part	Package / Case	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Power Dissipation (Max)	Power Dissipation (Max)
Nexperia USA Inc. PMV28ENER	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)	175 °C	-55 °C	Surface Mount	37 mOhm	8 nC	4.4 A	30 V	TO-236AB	4.5 V 10 V	20 V	2.5 V	266 pF	N-Channel	660 mW	8.3 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.37
		10	$ 0.28
		100	$ 0.17
		500	$ 0.16
		1000	$ 0.11
	Digi-Reel®	1	$ 0.37
		10	$ 0.28
		100	$ 0.17
		500	$ 0.16
		1000	$ 0.11
	N/A	3952	$ 0.65
	Tape & Reel (TR)	3000	$ 0.10
		6000	$ 0.09
		9000	$ 0.09
		30000	$ 0.08
		75000	$ 0.08

Description

General part information

PMV28ENE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.