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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Package / Case | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Power Dissipation (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 175 °C | -55 °C | Surface Mount | 37 mOhm | 8 nC | 4.4 A | 30 V | TO-236AB | 4.5 V 10 V | 20 V | 2.5 V | 266 pF | N-Channel | 660 mW | 8.3 W |