Discrete Semiconductor Products

APT44GA60BD30

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IGBT PT MOS 8 COMBI 600 V 44 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

IGBT PT MOS 8 COMBI 600 V 44 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	APT44GA60BD30

Current - Collector (Ic) (Max) [Max]	78 A
Current - Collector Pulsed (Icm)	130 A
Gate Charge	128 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	337 W
Supplier Device Package	TO-247 [B]
Switching Energy	258 µJ, 409 µJ
Td (on/off) @ 25°C	84 ns, 16 ns
Test Condition	26 A, 15 V, 4.7 Ohm, 400 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Test Condition	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Switching Energy	IGBT Type	Mounting Type	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case
Microchip Technology APT44GA60BD30	4.7 Ohm 15 V 26 A 400 V	130 A	2.5 V	258 µJ 409 µJ	PT	Through Hole	16 ns 84 ns	-55 °C	150 °C	TO-247 [B]	78 A	337 W	128 nC	600 V	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 600 V 78 A 337 W Through Hole TO-247 [B]

Technical documentation and resources