Discrete Semiconductor Products

JANTX2N5665

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Microchip Technology

NPN SILICON POWER SWITCHING 200V TO 300V, 5A

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Search across all available documentation for this part.

DocumentsDatasheet 2N5664 2N5665 2N5666 2N5667S

Discrete Semiconductor Products

JANTX2N5665

Active

Microchip Technology

NPN SILICON POWER SWITCHING 200V TO 300V, 5A

Deep-Dive with AI

DocumentsDatasheet 2N5664 2N5665 2N5666 2N5667S

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JANTX2N5665

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	200 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25 hFE
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-66-2, TO-213AA
Power - Max [Max]	2.5 W
Qualification	MIL-PRF-19500/455
Supplier Device Package	TO-66 (TO-213AA)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	300 V

JANTXV2N5665-Transistor Series

NPN Silicon Power Switching 200V to 300V, 5A

Part	Supplier Device Package	Power - Max [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Mounting Type	Current - Collector Cutoff (Max) [Max]	Grade	Qualification
Microchip Technology 2N5665	TO-66 (TO-213AA)	2.5 W	NPN	1 V	TO-213AA TO-66-2	25 hFE	300 V	5 A	Through Hole	200 nA
Microchip Technology JANTX2N5665	TO-66 (TO-213AA)	2.5 W	NPN	1 V	TO-213AA TO-66-2	25 hFE	300 V	5 A	Through Hole	200 nA	Military	MIL-PRF-19500/455
Microchip Technology JANTXV2N5665	TO-66 (TO-213AA)	2.5 W	NPN	1 V	TO-213AA TO-66-2	25 hFE	300 V	5 A	Through Hole	200 nA	Military	MIL-PRF-19500/455

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 30.46
Microchip Direct	N/A	1	$ 32.80

Description

General part information

JANTXV2N5665-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N5664, 2N5665, 2N5666 and 2N5667 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/455. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500/455. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANHC product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC product assurance level. RHA level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. The device package for the encapsulated device types are as follows: TO-66, TO-5 and TO-39, and surface mount version U3. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/455.