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3-XFDFN Exposed Pad
Discrete Semiconductor Products

PMXB65UPEZ

Active
Freescale Semiconductor - NXP

TRANS MOSFET P-CH 12V 3.2A 3-PIN DFN T/R

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3-XFDFN Exposed Pad
Discrete Semiconductor Products

PMXB65UPEZ

Active
Freescale Semiconductor - NXP

TRANS MOSFET P-CH 12V 3.2A 3-PIN DFN T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPMXB65UPEZ
Current - Continuous Drain (Id) @ 25°C3.2 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.2 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds634 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XDFN Exposed Pad
Power Dissipation (Max)317 mW, 8.33 W
Rds On (Max) @ Id, Vgs [Max]72 mOhm
Supplier Device PackageDFN1010D-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.32
10$ 0.22
100$ 0.11
500$ 0.09
1000$ 0.07
2000$ 0.06
Digi-Reel® 1$ 0.32
10$ 0.22
100$ 0.11
500$ 0.09
1000$ 0.07
2000$ 0.06
Tape & Reel (TR) 5000$ 0.06
10000$ 0.05

Description

General part information

PMXB65UPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.