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12 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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12 V, P-channel Trench MOSFET
12 V, P-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Package / Case | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 72 mOhm | 12 V | 634 pF | 8 V | 3-XDFN Exposed Pad | DFN1010D-3 | 12 nC | 1.2 V 4.5 V | MOSFET (Metal Oxide) | Surface Mount | 3.2 A | 8.33 W 317 mW | -55 °C | 150 °C | 1 V | P-Channel |