
LSIC1MO170E0750
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 6.2 A, 1.7 KV, 0.75 OHM, TO-247
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LSIC1MO170E0750
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 6.2 A, 1.7 KV, 0.75 OHM, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | LSIC1MO170E0750 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.2 A |
| Drain to Source Voltage (Vdss) | 1700 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 200 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs [Max] | 1 Ohm |
| Supplier Device Package | TO-247AD |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -6 V |
Pricing
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Description
General part information
LSIC1MO170E0750 Series
Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in 3 different discrete packages, with the recent addition of a TO-268-2L option with extra clearance between source and gate pin. The separated source pin of the TO-268-7L option reduce significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 ºC.
Documents
Technical documentation and resources