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LSIC1MO170E0750
Discrete Semiconductor Products

LSIC1MO170E0750

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Littelfuse/Commercial Vehicle Products

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 6.2 A, 1.7 KV, 0.75 OHM, TO-247

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LSIC1MO170E0750
Discrete Semiconductor Products

LSIC1MO170E0750

Active
Littelfuse/Commercial Vehicle Products

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 6.2 A, 1.7 KV, 0.75 OHM, TO-247

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationLSIC1MO170E0750
Current - Continuous Drain (Id) @ 25°C6.2 A
Drain to Source Voltage (Vdss)1700 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]200 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs [Max]1 Ohm
Supplier Device PackageTO-247AD
Vgs (Max) [Max]22 V
Vgs (Max) [Min]-6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 8.03
30$ 6.41
120$ 5.74
510$ 5.06
1020$ 4.55
2010$ 4.27
NewarkEach 1$ 7.84
25$ 4.89
100$ 4.34
250$ 4.15
500$ 4.06

Description

General part information

LSIC1MO170E0750 Series

Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in 3 different discrete packages, with the recent addition of a TO-268-2L option with extra clearance between source and gate pin. The separated source pin of the TO-268-7L option reduce significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 ºC.

Documents

Technical documentation and resources