Discrete Semiconductor Products
STP200NF03
NRNDSTMicroelectronics
N-CHANNEL 30V - 0.0032OHM - 120A D2PAK STRIPFET™ II MOSFET
Discrete Semiconductor Products
STP200NF03
NRNDSTMicroelectronics
N-CHANNEL 30V - 0.0032OHM - 120A D2PAK STRIPFET™ II MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STP200NF03 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 140 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4950 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 300 W |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP200NF03 Series
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.