Specification	FMBS2383

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	120 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	630 mW
Supplier Device Package	SuperSOT™-6
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

FMBS2383 Series

NPN Epitaxial Silicon Transistor

Part	Power - Max [Max]	Operating Temperature	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor FMBS2383	630 mW	150 °C	SOT-23-6 Thin TSOT-23-6	800 mA	100 nA	Surface Mount	1 V	NPN	SuperSOT™-6	160 V	120 MHz	80

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources