Discrete Semiconductor Products

FDB6690S

Obsolete

MOSFET N-CH 30V 42A TO263AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 42A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	FDB6690S

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1238 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	48 W
Rds On (Max) @ Id, Vgs [Max]	15.5 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDB6690S	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	15.5 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	42 A	Surface Mount	TO-263 (D2PAK)	48 W	3 V	20 V	1238 pF	15 nC	N-Channel	-55 °C	150 °C
ON Semiconductor FDB6690S	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	15.5 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	42 A	Surface Mount	TO-263 (D2PAK)	48 W	3 V	20 V	1238 pF	15 nC	N-Channel	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 42A (Ta) 48W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources