FDB669 Series
Manufacturer: ON Semiconductor
MOSFET N-CH 30V 42A TO263AB
| Part | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | FET Type | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 30 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 15.5 mOhm | MOSFET (Metal Oxide) | 4.5 V 10 V | 42 A | Surface Mount | TO-263 (D2PAK) | 48 W | 3 V | 20 V | 1238 pF | 15 nC | N-Channel | -55 °C | 150 °C |
ON Semiconductor | 30 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 15.5 mOhm | MOSFET (Metal Oxide) | 4.5 V 10 V | 42 A | Surface Mount | TO-263 (D2PAK) | 48 W | 3 V | 20 V | 1238 pF | 15 nC | N-Channel | -55 °C | 150 °C |