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ISL9N302AS3
Discrete Semiconductor Products

FQU1N60TU

Obsolete
ON Semiconductor

MOSFET N-CH 600V 1A IPAK

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DocumentsDatasheet
ISL9N302AS3
Discrete Semiconductor Products

FQU1N60TU

Obsolete
ON Semiconductor

MOSFET N-CH 600V 1A IPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFQU1N60TU
Current - Continuous Drain (Id) @ 25°C1 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC
Input Capacitance (Ciss) (Max) @ Vds150 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)30 W, 2.5 W
Rds On (Max) @ Id, Vgs11.5 Ohm
Supplier Device PackageIPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 607$ 0.55
607$ 0.55

Description

General part information

FQU1 Series

N-Channel 600 V 1A (Tc) 2.5W (Ta), 30W (Tc) Through Hole IPAK

Documents

Technical documentation and resources