FQU1 Series

Catalog

MOSFET N-CH 600V 1A IPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor FQU1N60TU	-55 °C	150 °C	11.5 Ohm	IPAK	N-Channel	10 V	MOSFET (Metal Oxide)	6 nC	600 V	1 A	150 pF	5 V	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	2.5 W 30 W	30 V
ON Semiconductor FQU13N10TU	-55 °C	150 °C	180 mOhm	IPAK	N-Channel	10 V	MOSFET (Metal Oxide)		100 V	10 A		4 V	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	2.5 W 40 W	25 V	16 nC	450 pF
ON Semiconductor FQU10N20LTU	-55 °C	150 °C	360 mOhm	IPAK	N-Channel		MOSFET (Metal Oxide)		200 V	7.6 A	830 pF	2 V	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	2.5 W 51 W	20 V	17 nC		10 V	5 V
ON Semiconductor FQU1N60TU	-55 °C	150 °C	11.5 Ohm	IPAK	N-Channel	10 V	MOSFET (Metal Oxide)	6 nC	600 V	1 A	150 pF	5 V	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	2.5 W 30 W	30 V