Discrete Semiconductor Products

FDMC2514SDC

Obsolete

ON Semiconductor

N-CHANNEL DUAL COOL™ 33 POWERTRENCH® SYNCFET™ 25V, 40A, 3.5MΩ

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Discrete Semiconductor Products

FDMC2514SDC

Obsolete

ON Semiconductor

N-CHANNEL DUAL COOL™ 33 POWERTRENCH® SYNCFET™ 25V, 40A, 3.5MΩ

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMC2514SDC

Current - Continuous Drain (Id) @ 25°C	24 A, 40 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	2705 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3 W, 60 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	Dual Cool ™ 33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMC2512SDC Series

N-Channel Dual CoolTM 33 PowerTrench® SyncFETTM 25V, 40A, 2.0mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package
ON Semiconductor FDMC2514SDC	44 nC	N-Channel	2705 pF	24 A 40 A	3 W 60 W	Surface Mount	MOSFET (Metal Oxide)	25 V	4.5 V 10 V	3.5 mOhm	20 V	-55 °C	150 °C	8-PowerTDFN	3 V	Dual Cool ™ 33
ON Semiconductor FDMC2512SDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMC2512SDC Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

Documents

Technical documentation and resources