Discrete Semiconductor Products
STB30NF20
ActiveSTMicroelectronics
N-CHANNEL 200 V, 0.065 OHM, 30 A, D2PAK STRIPFET(TM) POWER MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
STB30NF20
ActiveSTMicroelectronics
N-CHANNEL 200 V, 0.065 OHM, 30 A, D2PAK STRIPFET(TM) POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STB30NF20 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 38 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1597 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 75 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1554 | $ 2.98 | |
Description
General part information
STB30NF20 Series
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
Documents
Technical documentation and resources