Specification	FDP6030BL

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Input Capacitance (Ciss) (Max) @ Vds	1160 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs [Max]	18 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDP6030BL Series

N-Channel Logic Level PowerTrench® MOSFET 30V, 40A, 18mΩ

Part	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDP6030BL	3 V	Through Hole	TO-220-3	20 V	60 W	17 nC	N-Channel	30 V	175 ░C	-65 °C	TO-220-3	18 mOhm	1160 pF	MOSFET (Metal Oxide)	4.5 V 10 V
ON Semiconductor FDP6030BL	3 V	Through Hole	TO-220-3	20 V	60 W	17 nC	N-Channel	30 V	175 ░C	-65 °C	TO-220-3	18 mOhm	1160 pF	MOSFET (Metal Oxide)	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	476	$ 0.63
		476	$ 0.63

Description

General part information

FDP6030BL Series

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on)specifications resulting in DC/DC power supply designs with higher overall efficiency.