FDP6030BL Series

N-Channel Logic Level PowerTrench® MOSFET 30V, 40A, 18mΩ

Catalog

N-Channel Logic Level PowerTrench® MOSFET 30V, 40A, 18mΩ

Part	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDP6030BL	3 V	Through Hole	TO-220-3	20 V	60 W	17 nC	N-Channel	30 V	175 ░C	-65 °C	TO-220-3	18 mOhm	1160 pF	MOSFET (Metal Oxide)	4.5 V 10 V
ON Semiconductor FDP6030BL	3 V	Through Hole	TO-220-3	20 V	60 W	17 nC	N-Channel	30 V	175 ░C	-65 °C	TO-220-3	18 mOhm	1160 pF	MOSFET (Metal Oxide)	4.5 V 10 V

Catalog

N-Channel Logic Level PowerTrench® MOSFET 30V, 40A, 18mΩ

Key Features

• 40 A, 30 V

• RDS(ON)= 0.018 Ω @ VGS= 10 V

• RDS(ON)= 0.024 Ω @ VGS= 4.5 V

• Critical DC electrical parameters specified at evevated temperature.

• Rugged internal source-drain diode can eliminate theneed for an external Zener diode transient suppressor.

• High performance trend technology for extremely low RDS(ON).

• 175°C maximum junction temperature rating.

Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on)specifications resulting in DC/DC power supply designs with higher overall efficiency.